• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an automated system for a thin film manufacturing apparatus, and in particular, to provide the advantages of a box carrier method to a plasma chemical vapor deposition (Plasma Chemical Vapor Deposition) apparatus in a thin film manufacturing apparatus while supporting a glow discharge region on a substrate. The present invention relates to a thin film manufacturing apparatus that has a structure that facilitates cleaning by separating into a transport mechanism and enables automation for mass production. The thin film manufacturing apparatus includes: an entrance and exit port formed at a predetermined position on one side having a hollow inside; A reaction chamber having a raw material supply port mounted at a predetermined position on an inner side thereof; Electrode means fixedly spaced apart from each other in the inner hollow of the reaction chamber; It is characterized in that it comprises a substrate support and transport mechanism that is mounted and assembled on both sides of the substrate and detachably fitted between the electrode means.
    公开号:KR19990038496A
    申请号:KR1019970058247
    申请日:1997-11-05
    公开日:1999-06-05
    发明作者:김대원；배상순
    申请人:남창우；에스케이 주식회사；
    IPC主号:
    专利说明:

    Automation System of Thin Film Manufacturing Equipment
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an automated system for a thin film manufacturing apparatus, and in particular, to provide the advantages of a box carrier method to a plasma chemical vapor deposition (Plasma Chemical Vapor Deposition) apparatus in a thin film manufacturing apparatus while supporting a glow discharge region on a substrate. The present invention relates to an automation system of a thin film manufacturing apparatus that has a structure that facilitates cleaning by separating into a transport mechanism and enables automation for mass production.
    In general, the plasma CVD apparatus is processed at a relatively low temperature, and has the advantage of easily manufacturing a large-area, uniform thin film, which is a semiconductor integrated circuit and a thin film transistor liquid crystal display (TFT LCD). It is widely used to manufacture a semiconductor or insulator thin film constituting a solar cell.
    Plasma CVD apparatuses used in mass production processes include box carrier, roll-to-roll, in-line, and plasma box. The way is developed. Among these methods, the box carrier method is a batch method, which is excellent in mass productivity, low in device price, and high in utilization efficiency of raw material gas.
    Figure 1 shows the structure of a conventional thin film manufacturing apparatus having a box carrier as described above.
    The box carrier 10 of the conventional thin film manufacturing apparatus is a region 15 for injecting raw material gas into the glow discharge region 14 and the glow discharge region 14 largely surrounded by the RF electrode 11 and the ground electrodes 12 and 13. ) And a region 16 for discharging the reaction gas from the glow discharge region 14. The substrate 17 on which the thin film is grown is mounted on the two sides of the RF electrode 11 and the two inner surfaces of the ground electrodes 12 and 13 with the ground electrodes 12 and 13 open. Then, the ground electrodes 12 and 13 are closed and fixed, and the box carrier 10 is pushed into the reaction chamber (not shown). The reaction chamber may be maintained at a constant temperature and pressure, and supplies raw material gas and RF power to the box carrier 10. In the case of solar cells, amorphous silicon p, i and n layers are grown continuously. SiH 4 is mainly used as a source gas of the amorphous silicon thin film, and B 2 H 6 and PH 3 are added as doping gases in the manufacture of the p layer and the n layer, respectively. When a high frequency power of 13.56Mhz is applied to the RF electrode 11 while injecting the raw material gas into the box carrier 10, the glow discharge occurs in the glow discharge region 14 and includes the substrate 17. The thin film is grown inside the box carrier 10. After the reaction, the box carrier 10 is pulled out of the reaction chamber and the ground electrodes 12 and 13 are opened to take out the substrate 17.
    Since the thin film coated on the inside of the box carrier 10 is peeled off and floats in the form of particles, it is attached to the substrate 17 on which the thin film is to be formed, which may cause defects. Perform a wash. The a-Si thin film coated on the inside of the box carrier 10 is removed by dipping for a long time in an aqueous alkali solution such as KOH (potassium hydroxide). The aqueous alkali solution on the box carrier 10 should be thoroughly washed with ultrapure water, dried with dry air or nitrogen, and completely dried in a drying furnace.
    However, the conventional thin film manufacturing apparatus having the configuration as described above, firstly, the decomposition and cleaning of the box carrier is expensive, as well as manpower, time, as well as treatment of utilities such as ultrapure water, nitrogen, electricity and aqueous alkali solution, Secondly, in order to lower the price of the product, it is effective to pursue economies of scale by mass production, and a representative method for improving the productivity of the plasma CVD process is the large area of the substrate and the automation of the process or the conventional plasma CVD process. The box carrier is not suitable for mass production and automated processes due to complicated structures such as detachment of the substrate, loading of the box carrier, disassembly / cleaning / assembly of the box carrier, and a large area of the substrate. The electrode, which is a major part of, needs to be well electricityed and is not In order to use a metal plate such as stainless steel and to obtain a uniform thin film throughout the substrate, the area of the electrode must be larger than the area of the substrate and the distance must be constant. In addition, since the area must be large and the thickness must be large to prevent deformation due to heat or force, there is a problem in that as the area of the substrate is increased, the size and weight of the box carrier also increase, making it more difficult to handle.
    1 is a cross-sectional view of an operating state showing the structure of a thin film manufacturing apparatus according to the prior art.
    Figure 2 is a plan sectional view of a thin film manufacturing apparatus according to the present invention.
    Figure 3 is an exploded perspective view of the substrate support and transport mechanism, the substrate and the electrode in accordance with the present invention.
    4 is a perspective view of a substrate support and transport mechanism in accordance with the present invention.
    5 is a plan sectional view of a substrate support and transport mechanism in accordance with the present invention.
    6 is a cross-sectional view taken along the line AA ′ of FIG. 4.
    7 is a partially enlarged cross-sectional perspective view showing another embodiment of the substrate support and transport mechanism according to the present invention.
    8 is a schematic exploded perspective view of a rotating body according to the present invention.
    9 is an operating state perspective view schematically showing an operating state of the operating rod according to the present invention.
    10 is a plan sectional view showing an automated first embodiment of the thin film manufacturing apparatus according to the present invention.
    11 is a plan sectional view showing an automated second embodiment of the thin film manufacturing apparatus according to the present invention.
    Accordingly, the present invention has been made in view of the above-mentioned conventional problems, the object of which is that the structure is relatively simple and the maintenance and management cost is low, while the automation for mass production is easily carried out to improve the productivity of production cost It is possible to reduce and provide a thin film manufacturing apparatus capable of performing a smooth manufacturing process even if the size and weight of the electrode is increased according to the large area of the substrate and an automated system of excellent thin film manufacturing apparatus.
    An object of the present invention is a thin-film manufacturing apparatus, the cylindrical shape of a predetermined diameter having a hollow therein, having a predetermined width and length at one side of the entrance and exit formed in the longitudinal direction, and a plurality of predetermined mounting at a predetermined position on the inner peripheral surface A reaction chamber having two source gas supply ports; A vacuum exhaust portion having a predetermined diameter in the inner central portion of the reaction chamber and vertically formed, and electrode means fixedly alternately spaced apart from each other along the outer periphery of the vacuum exhaust portion, and rotating in an internal hollow of the reaction chamber. A rotatable portion that is possibly installed; The substrate is mounted and assembled on both sides, and detachably fitted between the electrodes between the electrodes of the rotating part, which can be achieved by a thin film manufacturing apparatus comprising a substrate supporting and conveying mechanism.
    Hereinafter, a preferred embodiment of the thin film manufacturing apparatus according to the present invention will be described.
    2 to 9 show the configuration of a preferred embodiment of the thin film manufacturing apparatus according to the present invention.
    Accordingly, the thin film manufacturing apparatus 100 according to the present invention is roughly composed of a reaction chamber 101, a vacuum exhaust unit 110, a rotation unit 120, and a substrate support and transport mechanism 130.
    The reaction chamber 101 has a cylindrical shape having a predetermined diameter and length having an internal hollow, and has an inlet and outlet 102 and a plurality of source gas supply holes 103.
    The inlet / outlet 102 has a predetermined diameter and length at a predetermined position on the outer circumferential surface of the reaction chamber 101 and is formed through the longitudinal direction, and the source gas supply hole 102 is formed along the inner surface of the reaction chamber 101. It is fixedly installed at predetermined intervals from each other.
    The vacuum exhaust unit 110 is a cylindrical shape having a predetermined diameter is installed vertically by the rotating unit in the inner central portion of the reaction chamber 101.
    The rotating part 120 includes a plurality of electrode means 121 and 122, upper and lower plates 123 and 124, and insulators 125 and 126.
    The upper and lower plates 123 and 124 are formed in a disk shape having a predetermined diameter, and the vacuum exhaust holes 123a and 124a having a predetermined diameter are formed therethrough.
    The electrode means 121 and 122 are composed of a plurality of RF electrodes 121 and ground electrodes 122 having a flat plane.
    The plurality of RF electrodes 121 and the ground electrodes 122 have inner and outer ends between the upper and lower plates 123 and 124 along the outer circumferential surfaces of the upper and lower plates 123 and 124 and the edges of the vacuum exhaust pipes 123a and 124a. When they are fixed to be radially spaced apart from each other at predetermined intervals such that they are alternately spaced in order, such as the RF electrode 121, the ground electrode 122, and the RF contact 121, the upper surfaces of the electrode means 121 and 122 are fixed. The insulators 125 and 126 are fixedly disposed between the lower surface of the upper plate 123 and between the lower surface of the electrode means 121 and 122 and the upper surface of the lower plate 124.
    The substrate support and the transfer mechanism 130 are detachably assembled between the RF electrode 121 and the ground electrode 122 of the electrode means, and each electrode is heated to a desired substrate temperature by a hot wire, an infrared lamp, or the like.
    The substrate support and transport mechanism 130 has a rectangular frame having a predetermined size and includes a metal plate 131 and a plurality of insulators 132 and 133.
    The metal plate 131 is a flat plate having a predetermined width and length, and the substrate supporting and conveying mechanisms 130 are fixedly attached to both side surfaces thereof, and are respectively predetermined along the longitudinal direction so that the metal inlet holes 131a and the gas are opposed to each other. A discharge hole 131b is provided, and the insulators 132 and 133 are fixedly attached along both ends of the inner surface.
    The gas inlet hole (131a) and the gas discharge hole (131b) is for the inlet of the source gas and the discharge of the reaction gas, there is a cation having a large energy in the plasma and the inner surface of the substrate support and transport mechanism When oxygen or nitrogen in the air remains in the reaction chamber 101 when the reaction chamber 101 is evacuated to a vacuum because it is exposed to the collision of, since it adversely affects the characteristics of the thin film as impurities, it adsorbs many gas molecules. The porous material that can be used cannot be used for the substrate paper and the conveying mechanism, and the inside of the substrate supporting and conveying mechanism 130 must be stable against the plasma because it is in contact with the glow discharge, that is, the plasma.
    The insulators 132 and 133 have predetermined widths and lengths on both side ends of the inner surface of the substrate support and conveyance mechanism 130, and fixed ends are fixedly opposite one end to each other in a small angle. The protrusions 132a and 133a having the protrusions are protruded, and materials of the insulators 132 and 133 may include Macol (Macor: product of Corning Grass Works) and Vespel (Product of Dufon). Since the price is expensive and relatively fragile, the glass plate can be replaced with a low price as shown in FIG. 7. That is, one end portion of the glass plate 142 having a predetermined width and length is fixedly attached to the plurality of supporting members 141 having the V-shaped recess 140 formed on one surface at a predetermined position on the inner surface of the metal plate 131. Both sides of the metal plate 131 are fixedly attached to face each other at right angles to each other, and one surface portion of each of the glass plates 142 is fixedly attached to the side portion of the support member 141.
    A metal substrate support 143 is fitted to the end of each glass plate 142 fixedly attached as described above, or a glass plate 144 having a predetermined width and length is provided at the end of each glass plate 142. The substrate support structure can be formed by fixedly attaching the inner surface to face each other.
    The metal substrate support 143 is bent in a U-shape so as to be fitted along the end of the glass plate 142, and a protrusion 143a having a predetermined width is protruded upward along one side of the upper surface.
    The substrate 150 is fitted to both sides of the substrate support and transfer mechanism 130 configured as described above. That is, the substrate 150 is fitted and assembled to the substrate support of the substrate support and transfer mechanism 130.
    Since the ground electrode 122 and the RF electrode 121 are in contact with the outer surfaces of the two substrates 15 facing each other, the substrate supporting and transporting mechanism 130 should electrically insulate both substrates. 150 is generally heated to a temperature of 300 ° C. or lower in the case of plasma CVD, so that the substrate support and transport mechanism 130 should be stable at a temperature of 300 ° C. or lower. That is, there should be no large change in the distance between the substrates 150 due to severe contraction or expansion at high temperature or discharge of impurities by out-gassing. This is because the spacing between the substrates 150 must be even and constant in order to produce the thin film evenly and reproducibly in a large area, and the impurities discharged by out-grazing adversely affect the physical properties of the thin film.
    An operating rod 160 having a predetermined length is installed vertically downwardly on the vacuum exhaust pipe 123a formed at the center of the upper plate 123 of the rotating part 120.
    The operating rod 160 is mounted on the outer peripheral surface of the lower end of the cylinder 161 linearly extending in a predetermined length side, the cylinder 161 is reciprocated outwardly perpendicular to the longitudinal direction of the operating rod 160.
    Fig. 10 is an operational state plan sectional view showing the first embodiment of the automation of the thin film manufacturing apparatus according to the present invention.
    Referring to FIG. 10, the reaction chamber 201, the loading and unloading chambers 203 and 204 of the thin film manufacturing apparatus 200 of the first embodiment have the same structure as the reaction chamber 101, and only a predetermined position on the outer circumferential surface thereof. Is different from the inlets 201a, 203a, and 204a and the outlets 201b, 203b, and 204b, respectively, having a predetermined width and length and penetrating vertically.
    Loading and unloading chambers 203 and 204 are connected to the reaction chamber 201 by gate valves 205 and 206 at predetermined positions outside the reaction chamber 201, respectively. 203 and 204 have the same structure as the reaction chamber 200.
    That is, the loading chamber 203 is formed through the inlet and outlet 203a, 203b having a predetermined width and length at a predetermined position on the outer circumferential surface so that the outlet 203b is the inlet 201a of the reactor 201 and the gate valve ( 205 is connected to each other, the unloading chamber 204 is formed through the inlet and outlet 204a, 204b having a predetermined width and length in a predetermined position on the outer circumferential surface through the inlet (204a) of the reactor 201 In communication with the outlet 202 and the gate valve 206, the rotating parts 203c and 204c in the loading and unloading chambers 203 and 204 have the same structure as the rotating part 201c of the reaction chamber 201. Have
    According to one embodiment of the automation having the above structure, when the substrate support and transport mechanism 130 is fitted to a predetermined position of the rotating part in the loading chamber 203 through the inlet 203a of the loading chamber 203, As the rotating part of the loading chamber 203 is rotated step by step, the cylinder 161 of the operating rod 160 is outward when the substrate supporting and conveying mechanism 130 assembled to the rotating part 203c is positioned at the outlet 203b. The substrate support and conveyance mechanism 130 is pushed outwardly to a predetermined position of the rotating part 201c of the reaction chamber 201 through the gate valve 205 while being extended to the outside. Assemble
    As described above, the substrate supporting and conveying mechanism 130 in which the substrate 150 assembled to the rotating part 201c of the reaction chamber 201 is assembled is rotated by the rotating part 201c, and the thin film of the substrate 150 is processed. The substrate supporting and conveying mechanism 130, which has been processed, is pushed outwardly by one end of the cylinder 161 of the operating rod 160 installed in the reaction chamber 201, and is unloaded through the gate valve 206. The reaction chamber 201 and the unloading chamber (when the rotary part 204c of the chamber 204 is fitted and rotated together with the rotary part 204c and positioned at the outlet 204b side of the unloading chamber 204). As in 203, the cylinder 161 of the operating rod 160 extends outward and pushes one end surface of the substrate support and transfer mechanism 130 to the outside of the unloading chamber 204 through the outlet 204b. The process of thin film manufacturing can be carried out automatically by discharging it.
    11 is a plan sectional view showing another embodiment according to the automation of the present invention.
    Referring to FIG. 11, the thin film manufacturing apparatus 600 according to the present invention includes first and second reaction chambers 500 and 501, a loading chamber 502, and an unloading chamber 503.
    The first and second reaction chambers 500 and 501 have the same internal structure as the reaction chamber 200 described above, and the outlet 500b and the first reaction chamber 500 of the first reaction chamber 500 are formed by the gate valve 506. 2 The inlet 501a of the reaction chamber 501 is connected in communication, and the inlet 500a of the first reaction chamber 500 and the outlet 502b of the loading chamber 502 are communicated by the gate valve 505. The outlet 501b of the second reaction chamber 501 is connected in communication with the inlet 503a of the unloading chamber 503.
    Therefore, the substrate supporting and conveying mechanism 130 is assembled and loaded at a predetermined position of the rotating portion 502c of the loading chamber 502 through the inlet 502a of the loading chamber 502, and the rotating portion 502c is continuously loaded. When the substrate support and conveyance mechanism 130 is positioned on the outlet 502b side while being rotated to the outside, the cylinder 161 of the operating rod 160 described above is extended outward and pushes the substrate support and conveyance mechanism 130. The rotary part 500c of the first reaction chamber 500 is fitted to the predetermined position through the gate valve 505. As described above, when the substrate supporting and conveying mechanism 130 of the loading chamber 502 is loaded into the rotating part 500c of the first reaction chamber 500, the rotating part 500c of the first reaction chamber 500 is rotated. When the primary thin film manufacturing process is completed and the substrate supporting and conveying mechanism 130 is located at the outlet 500b side of the first reaction chamber 500, the same operation as the discharge operation in the loading chamber 502 is performed. The substrate supporting and conveying mechanism 130 is fitted into the predetermined position of the rotating part 501c of the first reaction chamber 501 through the gate valve 506.
    When the substrate supporting and conveying mechanism 130 is fitted to the rotating part of the second reaction chamber 501 as described above, the secondary part of the substrate assembled to both sides of the substrate supporting and conveying mechanism 130 while rotating the rotating part. When the thin film manufacturing process is completed and the substrate supporting and conveying mechanism 130 is located at the outlet 501b side, the substrate is passed through the gate valve 504 by the same operation as the discharge operation in the first reaction chamber 500. The support and conveyance mechanism 130 is fitted and assembled at a predetermined position of the rotating part of the unloading chamber 503.
    When the substrate supporting and conveying mechanism 130 is fitted to the rotating part of the unloading chamber 503, the rotating part is rotated so that the second reaction when the substrate supporting and conveying mechanism 130 is located at the outlet 503b side. The thin film manufacturing process for the substrate can be automatically performed by unloading the substrate support and conveyance mechanism 130 assembled to the rotating part to the outside by the same operation as the discharge operation in the seal 501.
    In the thin film manufacturing apparatus according to the present invention having the configuration and the operation state as described above, the substrate supporting and conveying mechanism 130 and the substrate 150 are separated from the glow discharge region and the inside of the reaction chamber as much as possible so that impurities from the inside of the reaction chamber are glowed. It is possible to suppress the deterioration of the characteristics of the thin film that flows into the discharge area and grow on the substrate.In addition, the substrate simplifies and minimizes the structure of the plasma CVD apparatus in the reaction chamber. The manpower, material, and time required can be greatly reduced, and an inexpensive plasma CVD apparatus capable of responding to mass production can be manufactured by the movement of the substrate support and the transfer mechanism 130 on which the substrate 150 is mounted.
    权利要求:
    Claims (10)
    [1" claim-type="Currently amended] In the thin film manufacturing apparatus, a cylindrical shape having a predetermined diameter having a hollow therein, the inlet and outlet 102 having a predetermined width and length at a predetermined position on the outer circumferential surface and penetrating in the longitudinal direction, and a plurality of source gases fixedly mounted at the predetermined position on the inner circumferential surface A reaction chamber 101 having a supply port 103; The vacuum exhaust unit 110 having a predetermined diameter in the inner central portion of the reaction chamber 101 and formed vertically, and the electrode means 121 are alternately fixed at predetermined intervals along the outer circumference of the vacuum exhaust unit 110. And a rotating part 120 having a rotating part 120 installed in the internal hollow of the reaction chamber 101. Thin film manufacturing, characterized in that the substrate 150 is mounted and assembled on both sides and the substrate support and conveyance mechanism 130 is detachably fitted between the gaps between the electrodes (121, 122) of the rotary part 120 Device.
    [2" claim-type="Currently amended] 2. The thin film manufacturing apparatus of claim 1, wherein the source gas supplied through the source gas supply port 103 includes at least one compound of silicon and a halogen element such as SiH 4 , Si 2 H 6, SiF 4 , SiH 2 Cl 2, and the like.
    [3" claim-type="Currently amended] According to claim 1, wherein the rotating part 120 is a disk having a predetermined diameter and the upper plate (123) and the lower plate 124 through which the vacuum exhaust port (123a, 124a) having a predetermined diameter in the center portion; A plurality of RF electrodes 121 and ground electrodes 122 having a fan-shaped plane and arranged at predetermined intervals between the upper and lower plates 123 and 124 alternately; And a plurality of insulators 125 and 126 disposed between the lower surface of the upper plate 123 and the upper surface of the electrodes 121 and 121 and the upper surface of the lower plate 124 and the lower surface of the electrodes 121 and 122. Thin film manufacturing apparatus.
    [4" claim-type="Currently amended] The operating rod 160 of claim 1 or 3, wherein the operating rod 160 having a cylinder 161 which is horizontally reciprocated at a lower side is formed at a central portion of the vacuum exhaust pipe 123a of the upper plate 123. Thin film manufacturing apparatus characterized in that the installation.
    [5" claim-type="Currently amended] In the thin film manufacturing apparatus, the inlet and outlet 201a and 201b formed in a cylindrical shape having a predetermined diameter having a hollow therein, having a predetermined width and length at a predetermined position on the outer circumferential surface and penetrating in the longitudinal direction, and being mounted at a predetermined position on the inner circumferential surface. A reaction chamber 201 having a plurality of source gas supply holes 103 and having a rotating unit 201c rotatably installed in the internal hollow; A loading having an inlet and an outlet (203a, 203b) and a rotating part (203c) fixedly outside the reaction chamber (201), and having an outlet (203b) connected in communication with the inlet (201a) of the reaction chamber (201). Thread 203; An inlet and an outlet 204a and 204b and a rotating part 204c are fixed to the outside of the reaction chamber 201, the inlet 204a is connected to communicate with the outlet 201b of the reaction chamber 201 Thin film manufacturing apparatus comprising a loading chamber (204).
    [6" claim-type="Currently amended] The rotating parts 201c, 203c, and 204c of the reaction chamber 201, the loading chamber and the unloading chamber 203, 204 are provided with a cylinder 161 which is horizontally reciprocated on one lower side thereof. Thin film manufacturing apparatus characterized in that it comprises a working rod (160) which is installed vertically rotatably.
    [7" claim-type="Currently amended] The inlet 201a of the reaction chamber 201 and the outlet 203b of the loading chamber 203 are connected in communication with each other by a gate valve 205, and the outlet 201b of the reaction chamber 201. ) And the inlet (204a) of the unloading chamber 204 is connected in communication by the gate valve (206).
    [8" claim-type="Currently amended] In the thin film manufacturing apparatus, the inlet and outlets 500a and 500b formed in a cylindrical shape having a predetermined diameter having a hollow therein and having a predetermined width and length at a predetermined position on the outer circumferential surface thereof are formed at a predetermined position on the inner circumferential surface. A first reaction chamber (500) having a plurality of source gas supply holes (103) and having a rotating portion (500c) rotatably installed in the internal hollow; Inlet and outlet 501a, 501b formed in a cylindrical shape of a predetermined diameter having a hollow inside and having a predetermined width and length at a predetermined position on the outer circumferential surface and penetrating in the longitudinal direction, and a plurality of source gas supply holes predetermined at the predetermined position on the inner circumferential surface A second reaction chamber (103) having a rotating portion (501c) rotatably installed in the inner hollow, and the inlet (501a) being connected in communication with the outlet (500b) of the first reaction chamber (500) 501; A loading chamber 502 having inlets and outlets 502a and 502b and a rotating unit 502c, the outlets 502b being in communication with the inlets 500a of the first reaction chamber 500; And an unloading chamber 503 having inlets and outlets 503a and 503b and a rotating unit 503c and inlet 503a connected in communication with the outlet 501b of the second reaction chamber 501. Thin film manufacturing apparatus.
    [9" claim-type="Currently amended] The method of claim 8, wherein the first and second reaction chamber (500, 501), the loading chamber and the unloading chamber (502, 503) of the rotating portion (500c, 501c, 502c, 503c) in the lower one side horizontally reciprocating Thin film manufacturing apparatus characterized in that it comprises a working rod (160) having a cylinder (161) to be operated and rotatably installed vertically.
    [10" claim-type="Currently amended] The method of claim 8, wherein the outlet 500b of the first reaction chamber 500 and the inlet 501a of the second reaction chamber 501 are connected in communication by a gate valve 506, the loading chamber 502 Is connected to the outlet 502b of the first reaction chamber 500 and the inlet 500a of the first reaction chamber 500 by the gate valve 505, and the outlet 501b and the unloading chamber 503 of the second reaction chamber 501 are connected. Inlet (503a) of the thin film manufacturing apparatus, characterized in that connected in communication by the gate valve (504).
    类似技术:
    公开号 | 公开日 | 专利标题
    US20150364350A1|2015-12-17|Heating and cooling of substrate support
    TWI376763B|2012-11-11|Asymmetric grounding of rectangular susceptor
    US6176198B1|2001-01-23|Apparatus and method for depositing low K dielectric materials
    US5399387A|1995-03-21|Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
    KR101523988B1|2015-05-29|Advanced multi-workpiece processing chamber
    JPH0639447Y2|1994-10-12|Semiconductor layer deposition equipment for semiconductor device manufacturing
    KR910006675B1|1991-08-30|Photovoltage devices and deposition assembly
    JP5013393B2|2012-08-29|Plasma processing apparatus and method
    US6190460B1|2001-02-20|Apparatus for low pressure chemical vapor depostion
    KR101306315B1|2013-09-09|Apparatus for chemical vapor deposition
    EP0970267B1|2001-10-10|Susceptor designs for silicon carbide thin films
    JP2654996B2|1997-09-17|Vertical heat treatment equipment
    US5510151A|1996-04-23|Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space
    KR101495940B1|2015-02-25|Inductively coupled dual zone processing chamber with single planar antenna
    KR100279487B1|2001-02-01|Process Chamber Using Chemical Vapor Deposition
    US5114770A|1992-05-19|Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method
    US4322592A|1982-03-30|Susceptor for heating semiconductor substrates
    EP0165400B1|1989-03-01|Apparatus for plasma etching
    US3637434A|1972-01-25|Vapor deposition apparatus
    EP1358368B1|2016-04-13|Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
    US8709162B2|2014-04-29|Active cooling substrate support
    US5527417A|1996-06-18|Photo-assisted CVD apparatus
    US6065425A|2000-05-23|Plasma process apparatus and plasma process method
    EP0224360B1|1992-04-08|Semiconductor device manufacturing method
    KR100469134B1|2005-09-02|Inductive plasma chemical vapor deposition method and amorphous silicon thin film transistor produced using the same
    同族专利:
    公开号 | 公开日
    KR100489643B1|2005-09-06|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-11-05|Application filed by 남창우, 에스케이 주식회사
    1997-11-05|Priority to KR1019970058247A
    1999-06-05|Publication of KR19990038496A
    2005-09-06|Application granted
    2005-09-06|Publication of KR100489643B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970058247A|KR100489643B1|1997-11-05|1997-11-05|Automation System of Thin Film Manufacturing Equipment|
    [返回顶部]